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Si4654DY
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
25
R DS(on) ( Ω )
0.004 at V GS = 10 V
0.0052 at V GS = 4.5 V
I D (A) a
28.6
25.6
Q g (Typ.)
29 nC
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? 100 % R g Tested
? 100 % UIS Tested
APPLICATIONS
SO-8
? Synchronous Buck-Low Side
- Notebook, Game Console
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
? Synchronous Rectifier-POL
D
G
Top V ie w
S
Orderin g Information: Si4654DY-T1-E3 (Lead (P b )-free)
Si4654DY-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
25
± 16
28.6
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
23
18.6 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
14.9 b, c
70
5.1
2.2 b, c
30
45
A
mJ
T C = 25 °C
5.9
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
3.8
2.5 b, c
W
T A = 70 °C
1.6 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
R thJA
R thJF
37
17
50
21
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 69813
S09-0138-Rev. C, 02-Feb-09
www.vishay.com
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